| ‘lllvVISHAYQV 100 wwwymhaycom 8 0.1 instantaneous FonNard Current (A) Pulse Width : 300 Us1 % Duty Cycle DE Instantaneous Forward Voltage (V) 1.0 12 Fig. 3 - Typical Instantaneous FonNard Characteristics 100 10 PCurrent (UA) 0.01 instantaneous Reverse Leakage O 0010 20 40 60 so Percent of Rated Peak Reverse Voltage (%) 100 Fig. A - Typical Reverse Leakage Characteristics PACKAGE ouTLINE DIMENSIONS in inches (millimeters) FGP50B, FGP50C, FGP50D Vishay General Semiconductor 1000 100 Junction Capacitance (pF) 8 GP20 1.9 (25 4)MIN. a 2m (5 31 +a ‘go (4 81DlA 0 375 (9.510 285 (7.21 1.9 (25 4)MIN. o.u42 (1 07)0.037 (0 94) ￠DIA Revision: 12-Dec-13 3 1 10 Reverse Voltage (V) Fig. 5 - Typical Junction Capacitance Document N umber: 88879 For technical questions within your region: DiodesArnericas@visl1ay.com, DiodesAsia@vishay.com, DiodesEurooe@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 |